radar pulsed power transistor 8w, 1.2-1.4 ghz, 100s pulse, 10% duty m/a-com products released, 30 may 07 PH1214-8M 1 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? npn silicon microwav e power transistors ? common base configuration ? broadband class c operation ? high efficiency inter-digitized geometry ? diffused emitter ballasting resistors ? gold metallization system ? internal input and output impedance matching ? hermetic metal/ceramic package ? rohs compliant electrical specifications: t c = 25 5c ( room ambient ) parameter test conditions frequency symbol min max units collector-emitter breakdown voltage i c = 16ma bv ces 65 - v collector-emitter leakage current v ce = 40v i ces - 2.0 ma thermal resistance vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz r th(jc) - 4.9 c/w output power vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz p out 8.0 - w power gain vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz g p 7.0 - db collector efficiency vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz c 45 - % input return loss vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz rl - -6 db load mismatch tolerance vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz vswr-t - 3:1 - load mismatch stability vcc = 28v, pin = 1.6w f = 1.2, 1.3, 1.4 ghz vswr-s - 1.5:1 - absolute maximum ratings at 25c parameter symbol rating units collector-emitter voltage v ces 65 v emitter-base voltage v ebo 3.0 v collector current (peak) i c 1.5 a power dissipation @ +25c p tot 36 w storage temperature t stg -65 to +200 c junction temperature t j 200 c outline drawing
radar pulsed power transistor 8w, 1.2-1.4 ghz, 100s pulse, 10% duty m/a-com products released, 30 may 07 PH1214-8M 2 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly f (ghz) z if ( ? ) z of ( ? ) 1.2 tbd tbd 1.3 tbd tbd 1.4 tbd tbd rf test fixture impedance
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